Features and Benefits
CCPAK MOSFETs are designed to meet the high-power demands of next-generation industrial applications:
- High power rating (1.5 kW) in a compact 12 x 12mm package.
- Ultra-low RDS(on) for low I2R conduction losses.
- Best-in-class linear mode (SOA), in-rush & surge protection.
- Copper-clip technology gives low electrical & thermal resistance.
- High performance silicon.
- Outstanding board level reliability.
Applications
- High-power BLDC motor control
- High-power conversion (DC/DC & AC/DC)
- Battery management & protection
- Residential / commercial heat pump
- Renewable energy storage
- Hotswap for communication infrastructure
- Battery management systems
- Renewable energy
Top-side and bottom-side cooling
The CCPAK1212 series features a 12 mm × 12 mm footprint with bottom-side cooled CCPAK1212 and top-side cooled CCPAK1212i options, providing design flexibility, improved thermal management, and high performance in a compact size.
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Introducing Nexperia CCPAK1212 MOSFETs
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Products
MOSFETs
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN1R4-100ASE | N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R2-80ASE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMN1R4-100CSE | N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMN1R2-80CSE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Qualification | |
| PSMN1R0-100ASE | N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R0-80CSE | N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMNR90-80ASE | N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R0-100ASF | NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R0-100CSF | NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R1-80ASF | NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R3-100ASF | NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R1-80CSF | NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMNR90-80CSF | NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R4-100CSF | NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMNR90-80ASF | NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package | Production |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11156.pdf | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| AN50005.pdf | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| RS6121_CCPAK1212i_MOSFETs.png | - | Marcom graphics | 2024-11-15 |
| nexperia_document_CCPAK_MOSFETs_2024.pdf | Nexperia CCPAK MOSFETs | Leaflet | 2024-11-19 |
| nexperia_document_CCPAK-MOSFETs_2024_Chinese.pdf | CCPAK MOSFET LEAFLET CN | Leaflet | 2024-12-02 |
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